The ASBeST Project ( A ⁷Be Electron Capture Study for Nuclear and Solid-State Physics ) is a coordinated research initiative funded and supported by MUR PRIN 2020, involving multiple Research Units (RU) across Italy. The project brings together experts in nuclear physics, accelerator systems, solid-state physics, material science, and radiation detection. Below is an overview of the core Research Units contributing to ASBeST and their specific roles within the collaboration:
Research Unit 1 (RU1) – University of Campania “Luigi Vanvitelli”, Department of Mathematics and Physics
Located at the CIRCE Laboratory in Caserta, RU1 leads both experimental and theoretical efforts within ASBeST. It hosts the 3 MV Tandem Pelletron accelerator and the ERNA recoil separator, which are pivotal for in-flight decay measurements. RU1 is responsible for producing and purifying intense ⁷Be ion beams, managing accelerator beam transport and charge state selection, and developing implantation protocols into SiC devices. It also oversees the theoretical nuclear physics work, focusing on the calculation of nuclear matrix elements (NMEs) through advanced shell-model techniques. Key contributions include the design and implementation of low-current beam implantation systems, in-situ diagnostics using Rutherford Backscattering/Channeling (RBS/C), and Monte Carlo simulations for decay probability optimization. Prof. Lucio Gialanella, Principal Investigator, leads this unit with support from experts in weak interaction theory and ion beam physics.
People involved:
1) Responsible: Lucio Gialanella – Lucio.GIALANELLA@unicampania.it
2) Raffaele Buompane – Raffaele.BUOMPANE@unicampania.it
3) Nunjio Itaco – nunzio.itaco@unicampania.it
4) Claudio Santonastaso – claudio.santonastaso@gmail.com
5) Kajol Chakraborty – kajol.chakraborty@unicampania.it
Research Unit 2 (RU2) – CNR IMM Bologna (Institute for Microelectronics and Microsystems)
The Institute for the Study of Nanostructured Materials (CNR-ISMN – https://www.ismn.cnr.it/ ) is part of the 88 institutes of the National Research Council. Established on 13 September 2000 and operational since 2002, ISMN has achieved important results of scientific importance and established significant interaction with the National and International Research System and with the business world. ISMN boasts the collaboration of approximately 100 researchers and to achieve its objectives it integrates enabling and transversal technologies that include advanced materials, photonics, nanotechnology, biotechnology and advanced chemical and manufacturing processes. ISMN facilities include a 500 m2 clean room for the fabrication of advanced microelectronic devices and micro-electro mechanical systems.
RU2 provides the technological backbone of ASBeST’s solid-state component, specializing in the fabrication and optimization of 4H-SiC diode structures designed to host implanted ⁷Be under controlled electric fields. With advanced cleanroom facilities, high-temperature annealing capabilities, and ion implantation equipment, RU2 manufactures high-voltage n+/p junctions tailored to withstand breakdown fields of up to 4×10⁶ V/cm. Additionally, it develops theoretical models to describe ⁷Be implantation, lattice damage, annealing behavior, and substitutional fraction formation. The goal is to produce a reproducible and homogeneous electronic environment in which to probe field-induced modifications to the ⁷Be decay constant. RU2 also contributes statistical mechanical models for Be stabilization and supports material characterization through SEM, SIMS, FTIR, and Hall-effect measurements. Dr. Roberta Nipoti, a leader in SiC processing and ion beam analysis, heads this unit.
People involved:
1) Responsible: Dr. Marica Canino – mariaconcetta.canino@cnr.it
2) Dr. Virginia Boldrini – virginia.boldrini@cnr.it
3) Marco Pieruccini – marco.pieruccini@cnr.it
4) Prof. Cristian Degli Esposti Boschi – cristian.degliespostiboschi@cnr.it
Research Unit 3 (RU3) – INFN-Rome and LNGS (Laboratori Nazionali del Gran Sasso)
INFN Gran Sasso (RU3) is tasked with performing ultra-sensitive gamma-ray spectroscopy of ⁷Be decay, especially for low-activity samples implanted in SiC. Leveraging the STELLA facility—equipped with high-purity germanium (HPGe) detectors in a low-background, underground environment—RU3 measures the 478 keV gamma line from the first excited state of ⁷Li, the daughter nucleus of ⁷Be. This enables sub-permille precision in half-life measurements under varying electric fields. RU3 also develops simulation tools to optimize counting geometry and minimize background noise. Its infrastructure includes radon suppression systems, anti-coincidence shielding, and Monte Carlo analysis pipelines. Beyond measurements, RU3 collaborates on detector development and signal discrimination, and supports dissemination and experimental coordination. Dr. Alba Formicola, renowned for her work in underground nuclear astrophysics, coordinates RU3.
People involved
Research Unit 4 (RU4) – University of Salerno
RU4 brings advanced expertise in semiconductor device simulation, characterization, and irradiation monitoring. It performs both pre- and post-implantation analysis of SiC diodes, examining electric field distribution, breakdown behavior, radiation-induced damage, and charge carrier lifetime. RU4 utilizes admittance spectroscopy, time-resolved photoluminescence, deep level transient spectroscopy (DLTS), and high-resolution current-voltage analysis. It also performs temperature-dependent studies to assess defect states and doping efficiency post-implantation. During ⁷Be implantation, RU4 provides in-situ diagnostics via radiation-induced current monitoring, enabling real-time tracking of beam damage. Through simulations using SILVACO, RU4 optimizes electric field profiles and device configurations. Prof. Heinrich Christoph Neitzert, expert in device reliability and radiation effects, leads this team.
People involved